Abstract Submission Guidelines
Please prepare your abstract following the guidelines below.
The principle chemical processes and mechanisms that enable Area Selective Deposition (ASD) are rapidly becoming critical in several areas of materials and technological advancement. Most notably, the semiconductor industry will likely need new ASD processes to enable “chemical alignment” to complement traditional physical alignment (i.e. lithography) to allow transistors to scale to less than 10 nm dimensions. Other fields are also exploring chemical selectivity in materials to achieve precise targeted performance. Catalytic materials, for example, which are commonly employed to promote chemically selective reactions, are now being designed and constructed using site-selective deposition reactions. In addition, the growing complexity of energy generation and storage materials are also driving the need for new site- or area-selective processes to control heterogeneous material structures. The conference will cover a wide range of topics including the following:
- Chemical selectivity in surface reactions
- Mechanisms and surface-dependent thin film nucleation and growth
- Surface passivation for controlled nucleation and growth
- Patterned deposition resists, including organic monolayers, for selective deposition
- Chemical activation for nucleation enhancement
- Selectivity in thin film etching, including atomic layer etching (ALE)
- Processes and mechanisms for area-selective chemical vapor deposition (CVD)
- Processes and mechanisms area-selective atomic layer deposition (ALD)
- Metrology for Area-Selective Deposition
- Applications for area-selective deposition in electronics manufacturing
- Applications for area-selective processing in catalysis, energy generation and storage, and other emerging areas
- Surface characterization techniques for defects formation and mitigation
Acknowledgment that your abstract has been submitted will follow by e-mail shortly after submission. Notifications regarding acceptance will be sent by e-mail by March 26, 2018.